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Modulo di potenza IGBT
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Bordo di JAE per imbarcarsi sul modulo di potere dei connettori IGBT del mezzanino
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: JAE
Evidenziare:0.8mm pitch high power igbt module, right angle mosfet power module
IL-WX-30PB-HF-B-E1000E JAE Board to Board Mezzanine Connectors 0.8 mm pitch SMT Contact us if you need more detail or quotation of these item. info@gr-ele.com Product Attribute Attribute Value Manufacturer: JAE Electronics Product Category: Board to Board & Mezzanine Connectors RoHS: Details Pro... Visualizza di più
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Alto potere Igbt 3P 1.6KV 25A D-63 VS-26MT160 di 26MT160 26MT120 36MT120
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:high voltage igbt, high current igbt
26MT160 26MT120 36MT10 36MT120 IGBT Power Module3P 1.6KV 25A D-63 VS-26MT160 Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our su... Visualizza di più
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I telai pieni ad alta tensione del ponte 1200V 35A 200W di BSM25GD120DN2 Igbt montano
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 1-2 working days
Marca: Infineon
Evidenziare:insulated gate bipolar transistor, high voltage igbt
Manufacturer Infineon Technologies Series - Part Status Not For New Designs IGBT Type - Configuration Full Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 35A Power - Max 200W Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A Current - Collector Cutoff (Max) 800µA Input C... Visualizza di più
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modulo di potere di 50A 1200V IGBT 7MBR50SD120 7MBR50UA120 7MBR50UH120 7MBR50VB120
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: FUJITSU
Evidenziare:insulated gate bipolar transistor, high current igbt
7MBR50SD120 7MBR50UA120 7MBR50UH120 7MBR50VB120 IGBT Module Full Bridge Mount Module Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key t... Visualizza di più
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modulo di potere di 100A 1200V IGBT 7MBR50SC060 7MBR75U4B120 7MBR100U4B120 7MBR300RA060
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: FUJITSU
Evidenziare:insulated gate bipolar transistor, high voltage igbt
7MBR50SC060 7MBR75U4B120 7MBR100U4B120 7MBR300RA060 IGBT Power Module 50A 600V 100A 1200V Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the ... Visualizza di più
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Tipo a corrente forte 12F100 12JH11 25F60 25F80 25GR60 IR del modulo 10M10 di Igbt
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:high voltage igbt, high current igbt
10M10 12F100 12JH11 25F60 25F80 IGBT Power Module Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our success. G-Resource Electroni... Visualizza di più
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29RD80 29RD100 ha isolato il raddrizzatore controllato di silicio bipolare del transistor del portone 800V 26A
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:insulated gate bipolar transistor, high voltage igbt
29RD80 29RD100 IGBT Power Module Silicon Controlled Rectifier 800V 26A Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our success.... Visualizza di più
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il silicio del modulo di potere di 25j4b42 Igbt ha diffuso il tipo la cassa 12-35e1a della pila di raddrizzatore 600v 25a
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: TOSHIBA
Evidenziare:insulated gate bipolar transistor, high current igbt
25J4B42 IGBT Power Module SILICON DIFFUSED TYPE RECTIFIER STACK 600V 25A Case 12-35E1A Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key... Visualizza di più
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Il modulo di potere di 30GG2Z11 IGBT/TOSHIBA ha isolato il transistor bipolare del portone
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: TOSHIBA
Evidenziare:insulated gate bipolar transistor, high current igbt
30GG2Z11 IGBT Power Module TOSHIBA Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our success. G-Resource Electronics Co., Ltd has... Visualizza di più
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Modulo 30L6P45 30L6P44 30U6P45 20L6P45 30Q6P45 TOSHIBA di Igbt di alto potere
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: TOSHIBA
Evidenziare:insulated gate bipolar transistor, high voltage igbt
30L6P45 30L6P44 30U6P45 20L6P45 30Q6P45IGBT Power Module TOSHIBA Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our success. G-Res... Visualizza di più
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Modulo di potere di 36MB120 1P 1.2KV 35A D-34 IGBT/Igbt VS-36MB120 bipolare VS36MB120 36MB120A
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:insulated gate bipolar transistor, high voltage igbt
36MB120 BRIDGE RECT 1P 1.2KV 35A D-34 Module IGBT VS-36MB120 VS36MB120 36MB120A Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our... Visualizza di più
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Modulo di potere di 40HFR20 40HFR120 40HFR160 IGBT/transistor 200V 40A DO-5 DO-203AB del ponte
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:high voltage igbt, high current igbt
40HF20 40HFL60S02 40HFR20 40HFR120 40HFR160 IGBT Power Modulee 200V 40A DO-5(DO-203AB) Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key... Visualizza di più
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tipo alta efficienza del modulo di potere di 44A717067 IGBT 100V IR 40A 44A717067
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:insulated gate bipolar transistor, high voltage igbt
44A717067 IGBT Power Module 100V IR Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our success. G-Resource Electronics Co., Ltd ha... Visualizza di più
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1200 modulo di potere di volt 150A IGBT 5MA120 45MA40 45MA60 45MA80 45MA100
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:high voltage igbt, high current igbt
45MA120 45MA40 45MA60 45MA80 45MA100 IGBT Power Module 1200V 150A Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our success. G-Re... Visualizza di più
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Modulo 1600V 50A di 50RIA160M 50RIA120 50RIA120S90 Igbt a 208AC a 65
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:insulated gate bipolar transistor, high voltage igbt
50RIA160M 50RIA120 50RIA120S90 IGBT Power Module 1600V 50A TO-208AC(TO-65) Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our succ... Visualizza di più
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Igbt in elettronica di potenza 52MT120KB 52MT140KB 60MT100KB 60MT120KB 1200V 50A
Prezzo: negotiable
MOQ: 1 Pcs
Tempo di consegna: 2-3 working days
Marca: IR
Evidenziare:insulated gate bipolar transistor, high current igbt
52MT120KB 52MT140KB 60MT100KB 60MT120KB IGBT Power Module 1200V 50A Contact us if you need more detail or quotation of these item. info@gr-ele.com G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our success. G-... Visualizza di più
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