sistema di tempera termico rapido di 150mm con tre gas trattati degli insiemi
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: 8-10week days
Marca: GaNova
Evidenziare:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Visualizza di più
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Aumentate la vostra produzione con la RTP-SA-8
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3 month
Marca: Ganova
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... Visualizza di più
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Il Fe ha verniciato GaN Substrates Resistivity > 10 ⁶ Ω·Dispositivi di cm rf
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Visualizza di più
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625um allo zaffiro piano blu a 4 pollici di 675um LED GaN Epitaxial Wafer On Sapphire SSP
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Visualizza di più
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C-aereo Sapphire Substrate Wafer di JDCD08-001-006 6inch
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Visualizza di più
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2 pollici di GaN su wafer Epi HEMT di silicio per dispositivo di alimentazione
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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spessore 325um 375um del wafer epitassiale di GaN del fronte di 5 x 10 mm2 m.
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... Visualizza di più
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Resistività SSP con wafer in zaffiro GaN drogato UID tipo N da 4 pollici > 0,5 Ω cm LED, laser, wafer epitassiale PIN
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... Visualizza di più
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4 pollici blu LED GaN epitassiale wafer C piano zaffiro piatto
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... Visualizza di più
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375 um GaN Wafer epitassiale Autoportante U-GaN SI-GaN Substrati
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... Visualizza di più
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Substrato GaN indipendente dopato con Fe da 4 pollici Substrato di nitruro di gallio
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Visualizza di più
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Substrato GaN freestanding 4 pollici di nitruro di gallio
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Visualizza di più
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2 pollici di GaN su wafer Epi HEMT di silicio per dispositivo di alimentazione
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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2 pollici di substrato GaN indipendente non dopato
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium... Visualizza di più
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Sn Doping Ga2O3 Wafer Singolo substrato di cristallo 10x10mm2
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... Visualizza di più
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Singolo Ga2O3 wafer lucidato laterale singolo Crystal Substrate
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:Side Polished Ga2O3 Wafer, 0.6mm gallium nitride substrate, Ga2O3 Wafer UKAS
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain c... Visualizza di più
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0.6mm 0.8mm Ga2O3 singolo Crystal Substrate Single Polishing
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:Ga2O3 Single Crystal Substrate, Gallium Oxide wafer 0.6mm, 0.8mm Single Crystal Substrate
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal subs... Visualizza di più
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JDCD04-001-007 10x10mm2(010) Sn-Doped Free-Standing Ga2O3 Substrato a cristallo singolo Grado del prodotto Singola lucidatura
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to p... Visualizza di più
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wafer sic epitassiale di 150.0mm +0mm/-0.2mm nessun piano secondario 3mm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Visualizza di più
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47,5 millimetri di ± un wafer sic epitassiale 150,0 millimetro +0mm/-0.2mm to<11-20>±1° parallelo da 1,5 millimetri
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Visualizza di più
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