Sistema di ricottura RTP-SA-8
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3 month
Marca: Ganova
Evidenziare:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... Visualizza di più
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sistema di tempera termico rapido di 150mm con tre gas trattati degli insiemi
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: 8-10week days
Marca: GaNova
Evidenziare:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Visualizza di più
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Il Fe ha verniciato GaN Substrates Resistivity > 10 ⁶ Ω·Dispositivi di cm rf
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Visualizza di più
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625um allo zaffiro piano blu a 4 pollici di 675um LED GaN Epitaxial Wafer On Sapphire SSP
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Visualizza di più
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C-aereo Sapphire Substrate Wafer di JDCD08-001-006 6inch
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Visualizza di più
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GaN 2 pollici di nitruro di gallio monocristallino
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... Visualizza di più
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Wafer Gan Epi monocristallo Nitruro di Gallio 4 pollici
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Visualizza di più
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4 pollici di nitrito di gallio GaN dopato
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Visualizza di più
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Dispositivo di potenza da 2 pollici Transistor ad alta mobilità elettronica Wafer epitaxiale
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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625um a 675um 4 pollici Blu LED nitruro di gallio GaN Wafer epitaxial sul zaffiro SSP Sapphire piatto
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Visualizza di più
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ALN 10*10mm2 AlN singolo cristallo 400±50μM grado S/P/R
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: GaNova
Evidenziare:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Visualizza di più
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2 pollici di GaN su wafer Epi HEMT di silicio per dispositivo di alimentazione
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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Wafer epitaxiale di tipo GaN da 2 ′′ a 6 pollici su zaffiro per dispositivo PIN laser LED
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: 3-4 weeks
Evidenziare:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Visualizza di più
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Wafer monocristallino da 1 pollice AlN 400±50μM grado S/P/R
Prezzo: Negotiable
Tempo di consegna: Negotiable
Marca: GaNova
Evidenziare:1 Inch aln wafer, aln wafer 1 Inch, aluminum nitride wafer aln
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Visualizza di più
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Wafer epitaxial GaN essenziale per la produzione di chip ad alta tensione ad alta frequenza
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: 3-4 weeks
Marca: Ganova
Evidenziare:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Visualizza di più
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Barriera AlGaN 4 pollici GaN sul silicio HEMT Epi wafer nitruro di gallio GaN-on-Si
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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6 pollici GaN sul silicio HEMT Epi Wafer Power Device Gallium Nitride GaN sul Si
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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GaN laser viola sul silicio 2 pollici GaN sul silicio HEMT Epi wafer UV LD Epi wafer
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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2 pollici di GaN sul silicone Blu LD Epi Wafer GaN laser blu sul silicio
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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LED blu GaN sul Wafer di silicio GaN laser blu Wafer epitexiale
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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