GaN Epitaxial Wafer
(69)
Il Fe ha verniciato GaN Substrates Resistivity > 10 ⁶ Ω·Dispositivi di cm rf
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Visualizza di più
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625um allo zaffiro piano blu a 4 pollici di 675um LED GaN Epitaxial Wafer On Sapphire SSP
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Visualizza di più
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spessore 325um 375um del wafer epitassiale di GaN del fronte di 5 x 10 mm2 m.
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... Visualizza di più
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Resistività SSP con wafer in zaffiro GaN drogato UID tipo N da 4 pollici > 0,5 Ω cm LED, laser, wafer epitassiale PIN
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... Visualizza di più
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4 pollici blu LED GaN epitassiale wafer C piano zaffiro piatto
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... Visualizza di più
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375 um GaN Wafer epitassiale Autoportante U-GaN SI-GaN Substrati
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... Visualizza di più
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Substrato GaN indipendente dopato con Fe da 4 pollici Substrato di nitruro di gallio
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Visualizza di più
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Substrato GaN freestanding 4 pollici di nitruro di gallio
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Visualizza di più
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2 pollici di substrato GaN indipendente non dopato
Prezzo: Negotiable
MOQ: 1
Tempo di consegna: Negotiable
Marca: Ganova
1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium... Visualizza di più
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12.5mm 2inch N indipendente GaN Epi Wafer Si Doped
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:12.5mm gan epi wafer, 2inch gallium nitride wafer, 2Inch gan epi wafer
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputteri... Visualizza di più
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Spessore 370um 430um GaN Epi Wafer Dimensions a 2 pollici 50mm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:2 Inch GaN Epi Wafer, 370um single crystal wafer, 430um GaN Epi Wafer
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently... Visualizza di più
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Wafer epitassiale GaN 5x10mm2 Tipo SI non drogato
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:GaN Epitaxial Wafer SI Type, 5x10.5mm2 gan epi wafer, 5x10.5mm2 GaN Epitaxial Wafer
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, hig... Visualizza di più
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Wafer a semiconduttore al nitruro di gallio a cristallo singolo TTV 10um
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... Visualizza di più
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Aereo del wafer 325um 375um C a semiconduttore del nitruro di gallio
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... Visualizza di più
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5x10mm2 Sp Face Gan Wafer epitassiale Un drogato Si tipo Gan Substrato a cristallo singolo
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... Visualizza di più
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L'ONU ha verniciato il tipo GaN Single Crystal Substrate 5x10mm2 m. Face di N
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... Visualizza di più
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625um a 675um 4 pollici Blu LED nitruro di gallio GaN Wafer epitaxial sul zaffiro SSP Sapphire piatto
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: 3-4 week days
Marca: GaNova
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Visualizza di più
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GaN Epitaxial Wafer Essential for High Voltage High Frequency Chip Production
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: 3-4 weeks
Marca: Ganova
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Visualizza di più
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2–6-inch N-type GaN on Sapphire Epitaxial Wafer for LED laser PIN Device
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: 3-4 weeks
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Visualizza di più
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better perfo... Visualizza di più
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