Wafer sic epitassiale
(33)
2 pollici di GaN su wafer Epi HEMT di silicio per dispositivo di alimentazione
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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2 pollici di GaN su wafer Epi HEMT di silicio per dispositivo di alimentazione
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
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wafer sic epitassiale di 150.0mm +0mm/-0.2mm nessun piano secondario 3mm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Visualizza di più
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47,5 millimetri di ± un wafer sic epitassiale 150,0 millimetro +0mm/-0.2mm to<11-20>±1° parallelo da 1,5 millimetri
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Visualizza di più
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4H wafer sic epitassiale ≤0.2 /cm2 0.015Ω•cm-0.025Ω•cm 150,0 millimetro +0mm/-0.2mm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:4H SiC Epitaxial Wafer, silicon carbide wafer ISO9001, SiC Epitaxial Wafer 0.2 /Cm2
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is muc... Visualizza di più
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4H wafer sic epitassiale 0.015Ω•cm-0.025Ω•² 150,0 millimetro +0mm/-0.2mm di cm ≤4000/cm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:4H SiC Epitaxial Wafer, silicon epi wafer 0.025Ω•Cm, SiC Epitaxial Wafer 0.015Ω•Cm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite.... Visualizza di più
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Substrato SiC da 2 pollici di livello P per dispositivi di alimentazione e dispositivi a microonde
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:P Level SiC Substrate, Microwave Devices silicon carbide substrate, 2 Inch SiC Substrate
P-Level 4H-N/SI260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power elec... Visualizza di più
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Substrato SiC da 2 pollici 350μm per elettronica di potenza impegnativa
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:2 Inch SiC Substrate, Demanding Power Electronics 2 inch wafer, SiC Substrate 350um
P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, ... Visualizza di più
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0.015Ω•cm-0.025Ω•CMP polacco ottico del Si-fronte del C-fronte sic epitassiale del wafer di cm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:SiC Epitaxial Wafer C-Face, Optical Polish sic wafer, Si-Face CMP Sic Epitaxial Wafer
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. T... Visualizza di più
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Livello P del substrato di carburo di silicio da 260 μm per dispositivi di alimentazione e dispositivi a microonde
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:260um silicon carbide substrate, Power Devices Epitaxial Wafer, silicon carbide substrate P Level
4H-N/SI260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC subs... Visualizza di più
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Politipo Nessuno Consentito Wafer epitassiale SiC P-MOS P-SBD Grado D
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:SiC Epitaxial Wafer P-MOS, D Grade silicon epi wafer, SiC Epitaxial Wafer P-SBD
JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to... Visualizza di più
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substrato del wafer SiC del wafer epitassiale di 4H SiC per i dispositivi fotonici ISO9001
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:SiC Epitaxial Wafer Photonic Devices, 4H 2 inch wafer, SiC Epitaxial Wafer ISO9001
4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth (called epitaxy) for use in making semiconductor and photonic devices such as light-emitting diodes (LEDs). Several methods... Visualizza di più
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4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to convention... Visualizza di più
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Substrato 4H-SiC da 4 pollici Livello P Tipo N 350,0±25,0μM MPD≤0,5/Cm2 Resistività 0,015Ω•Cm—0,025Ω•Cm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to... Visualizza di più
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Substrato 4H-SiC da 4 pollici Livello P SI 500.0±25.0μM MPD≤0.3/Cm2 Resistività≥1E9Ω·Cm Per alimentazione e microonde
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤0.3/cm2 Resistivity≥1E9Ω·cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher therm... Visualizza di più
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P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:P-MOS Grade SiC Epi Wafer, 150.0mm SiC Substrate, SiC Epi Wafer P Level
P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview At the system level, this results in highly compact solutions with vastly improved energy efficiency at red... Visualizza di più
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Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:SiC Epitaxial Wafer C-Face, Silicon Carbide Epitaxial Wafers, CMP SiC Epitaxial Wafer
JDCD03-001-004 SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face:CMP Overview It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material. The lattice structure and orientation or lattice symmetry of the thin film material is i... Visualizza di più
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Substrato di tipo SiC N da 6 pollici 4H 47,5 mm senza piatto secondario
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:SiC N Type Substrate, 6inch SiC Wafer, 4H N Type substrate
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial... Visualizza di più
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2 Inch Semiconductor Wafer P Level 260μm For Power Devices Microwave Devices
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:2 Inch semiconductor wafer, Microwave Devices semiconductor wafer, Semiconductor Wafer P Level
JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and high-frequency semiconductor devices that operate well beyond the ca... Visualizza di più
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Nessun substrato SiC piatto secondario 150,0 mm 47,5 mm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:No Secondary Flat SiC Substrate, 47.5mm semiconductor wafer, SiC Substrate 150.0mm
2-Inch SiC Substrate 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm No Secondary Flat JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Our relentless focus on continuously improving materials quality and increasing substrate diameters directly ben... Visualizza di più
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