Wafer sic epitassiale
(42)
Dispositivo di potenza da 2 pollici Transistor ad alta mobilità elettronica Wafer epitaxiale
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
➤ Visita Sito web
2 pollici di GaN su wafer Epi HEMT di silicio per dispositivo di alimentazione
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
➤ Visita Sito web
Barriera AlGaN 4 pollici GaN sul silicio HEMT Epi wafer nitruro di gallio GaN-on-Si
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
➤ Visita Sito web
6 pollici GaN sul silicio HEMT Epi Wafer Power Device Gallium Nitride GaN sul Si
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
➤ Visita Sito web
GaN laser viola sul silicio 2 pollici GaN sul silicio HEMT Epi wafer UV LD Epi wafer
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
➤ Visita Sito web
2 pollici di GaN sul silicone Blu LD Epi Wafer GaN laser blu sul silicio
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
➤ Visita Sito web
LED blu GaN sul Wafer di silicio GaN laser blu Wafer epitexiale
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Visualizza di più
➤ Visita Sito web
2 pollici di GaN sul silicio verde LED Epi wafer Gallio nitruro sul silicio
Prezzo: Negotiable
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Visualizza di più
➤ Visita Sito web
4 pollici di GaN su wafer Epi LED verde di silicio
Prezzo: 1000
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Visualizza di più
➤ Visita Sito web
4 pollici di GaN su wafer Epi LED verde di silicio
Prezzo: 1000
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Visualizza di più
➤ Visita Sito web
4 pollici di uGaN sul nitruro di gallio di silicio non dopato sul Wafer Epitaxial di silicio
Prezzo: 1000
MOQ: 5
Tempo di consegna: Negotiable
Marca: Ganova
Evidenziare:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Visualizza di più
➤ Visita Sito web
wafer sic epitassiale di 150.0mm +0mm/-0.2mm nessun piano secondario 3mm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Visualizza di più
➤ Visita Sito web
47,5 millimetri di ± un wafer sic epitassiale 150,0 millimetro +0mm/-0.2mm to<11-20>±1° parallelo da 1,5 millimetri
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Visualizza di più
➤ Visita Sito web
4H wafer sic epitassiale ≤0.2 /cm2 0.015Ω•cm-0.025Ω•cm 150,0 millimetro +0mm/-0.2mm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:4H SiC Epitaxial Wafer, silicon carbide wafer ISO9001, SiC Epitaxial Wafer 0.2 /Cm2
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is muc... Visualizza di più
➤ Visita Sito web
4H wafer sic epitassiale 0.015Ω•cm-0.025Ω•² 150,0 millimetro +0mm/-0.2mm di cm ≤4000/cm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:4H SiC Epitaxial Wafer, silicon epi wafer 0.025Ω•Cm, SiC Epitaxial Wafer 0.015Ω•Cm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite.... Visualizza di più
➤ Visita Sito web
Substrato SiC da 2 pollici di livello P per dispositivi di alimentazione e dispositivi a microonde
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:P Level SiC Substrate, Microwave Devices silicon carbide substrate, 2 Inch SiC Substrate
P-Level 4H-N/SI260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power elec... Visualizza di più
➤ Visita Sito web
Substrato SiC da 2 pollici 350μm per elettronica di potenza impegnativa
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:2 Inch SiC Substrate, Demanding Power Electronics 2 inch wafer, SiC Substrate 350um
P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, ... Visualizza di più
➤ Visita Sito web
0.015Ω•cm-0.025Ω•CMP polacco ottico del Si-fronte del C-fronte sic epitassiale del wafer di cm
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:SiC Epitaxial Wafer C-Face, Optical Polish sic wafer, Si-Face CMP Sic Epitaxial Wafer
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. T... Visualizza di più
➤ Visita Sito web
Livello P del substrato di carburo di silicio da 260 μm per dispositivi di alimentazione e dispositivi a microonde
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:260um silicon carbide substrate, Power Devices Epitaxial Wafer, silicon carbide substrate P Level
4H-N/SI260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC subs... Visualizza di più
➤ Visita Sito web
Politipo Nessuno Consentito Wafer epitassiale SiC P-MOS P-SBD Grado D
Prezzo: Negotiable
MOQ: Negotiable
Tempo di consegna: 3-4 week days
Marca: GaNova
Evidenziare:SiC Epitaxial Wafer P-MOS, D Grade silicon epi wafer, SiC Epitaxial Wafer P-SBD
JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to... Visualizza di più
➤ Visita Sito web